Karl Suss MA200 Mask Aligner 光刻機(jī)
Exposure System
Resolution HR
LGO
3?μm (20μm proximity)
7?μm (100?μm gap)
10?μm (150?μm gap)
Accuracy in Constant
Dose Exposure
<1%
Exposure Modes Vacuum contact, hard contact, soft
contact, proximity, flood exposure
Intens ity / Uniformity*
Optics Type (1000W)
SUSS UV-Optometer
Intensity Uniformity
UV400 HR
W200
365nm 36mW/cm2
broadband 69mW/cm2 < 3,5%
UV400 LGO
W200
365nm 16mW/cm2
broadband 33mW/cm2 < 3,5%
UV400 MO
HR-IFP W200
365nm 31mW/cm2
broadband 60mW/cm2 < 2,5%
UV400 HR
W150
365nm 75mW/cm2
broadband 170mW/cm2 < 3,5%
Alignment System
Alignment Accuracy 0.5μm/3σ (TSA, AutoAL, DirectAlign)
1μm/3σ (TSA, AutoAL)
1μm/3σ (BSA, AutoAL)
Pattern Recognition Cognex (CNL, PatMax)
Run-Out Compensation ThermAlign chuck (optional)
Large Clearfield Alignment 1μm
Prealignment Accuracy < 50?μm
Wafer Handling
Wafer Size 2" -200mm, round or square
Allowable Wafer Warpage 1mm
Perforated Wafers Yes
Carrier Mounted Wafers Yes
Thin Wafers without Carrier
(200mm)
Thickness: down to 120μm
Max. warpage: 5 to 6mm
Throughput > 100wph
Wafer Size Conversion < 5minutes
Technical Data
Utilities
Vacuum < 0.2MPa (absolute)
Nitrogen/1500W LH 0.2–0.3MPa, 2.4m3/h
Power/1500W LH Voltage: 400VA, 3Phase Y
Power: 2800VA, 50Hz
Compressed Air 1500 LH 0.2–0.3MPa, 2.4m3/h
Reliability E-MTBF 500h
MTTR 4h
Uptime >95%
Physical Dimensions (Standard Configuration)
Height x Width x Depth 2000mm x 1509mm x 1405mm
Weight ca. 1100kg
*Typical values for 1000W HBO-lamp measured with SUSS UV-Optometer. Available values
depend on lamp power, lamp type, lamp lifetime, etc.
Data, design and specification of custom-built machines depend on individual process conditions
and can vary according to equipment configurations. Not all specifications may be
valid simultaneously. Illustrations in this brochure are not legally binding.
SUSS MicroTec reserves the right to change machine specifications without prior notice
